空天论坛-Investigation of silicon carbide power MOSFET—— characterization & issues in application
发布于:2018-06-04 10:03:09   |   作者:[学院] 航空航天学院   |   浏览次数:2160

报告人: 吴瀛喆

时间:201867日,14:00~16:00

地点:研究院大楼202

 

内容简介:

As the heart component of power inverter/converter, semiconductor device, such as MOSFETs, has played significant roles in modern power applications. Techniques of silicon (Si) semiconductor devices have been developed for about 50 years and approached its material theoretical limitations in terms of blocking voltage, operation temperature as well as conduction and switching characteristics. Silicon carbide (SiC) power semiconductor device is characterized by higher block voltage, higher operation temperature, fast switching characteristics, lower switching losses and higher power density, as the result, it has become an available alternative to conventional Si power semiconductor device. This report has investigated recent researchers on characterization of SiC power MOSFET and the main issues existed in its application. 

报告人简介:吴瀛喆系航空航天学院2015级博士研究生。主要研究方向包括:宽禁带半导体功率器件的建模与应用,电机高频建模以及电机驱动系统关键技术研究。