Title:  Magnetoceramics for self biased RF devices at Ka band and above

Speaker: Vincent G. Harris（Dr.）

Host:     Liu Cheng （A.Prof.）

Abstract:

Vincent Harris has had a distinguished career as an engineer, scientist, inventor, and entrepreneur for 27 years. He presently holds positions of University Distinguished Professor and William Lincoln Smith Chair Professor at Northeastern University (Boston, MA USA). Prior to holding these positions, he was a member of the technical staff, Head of the Complex Materials Section, and Head of the Materials Physics Branch at the Naval Research Laboratory (Washington D.C. USA). From 1990-1993 he held the position of National Research Council Fellow at the NRL. His professional preparation includes the Ph.D. (NU-EE), M.Sc. (NU-ME, MSE), M.Sc. (U. Md.-Eng. Mgt.), M.Eng. (U. Penn.-Exec. Tech. Mgt.), and B.Sc. (NU-ME) degrees. His research interests encompass materials design and the study of processing, structure and magnetism in a wide range of electronic materials, devices and systems used principally in high frequency applications such as sensors, radar and communication systems and platforms. He has published more than 350 technical articles in peer-reviewed science and engineering journals, including book chapters, review articles, and invited technical feature articles on the topical areas of nanotechnology, magnetism, and microwave materials and devices. Harris places in the top 1% of the most-cited engineers and scientists worldwide over the last decade with h=48 and total citations exceeding 9500. Harris has been recognized with national and international awards for scholarship including the TMS Functional Materials Division (FMD) Distinguished Scientist Award for 201; named to the DeTao Masters Academy (Shanghai and Beijing, China); recipient of the Lee Hsun Research Award and Lectureship on Materials Science by the Institute of Metals Research - Chinese Academy of Sciences (2013); the Zhong-Guan Cun Lectureship Award on Condensed Matter Physics, 114th Lecture, Institute of Physics - Chinese Academy of Sciences (2007); Senior Fellow of the J. William Fulbright International Scholar Program (2012-2017); Visiting Professor, Institute of Microelectronics - Chinese Academy of Sciences (2009); Visiting Professor, University of Electronic Science and Technology of China (UESTC) (2014-2020); Visiting Professor, Huazhong University of Science and Technology (HUST) (2014-2017); Visiting Professor of theMaterials and Structures Laboratory (MSL), Tokyo Institute of Technology – Yokohama (2013); and, Visiting Scientist, Air Force Research Laboratory (AFRL), Sensors Directorate, Wright Patterson Air Force Base, Dayton OH USA. He is a Fellow of the AAAS, APS, IEEE, IOP, and Fulbright. In 2007, Harris was named a Distinguished Lecturer of the Institute of Electrical and Electronic Engineering (IEEE) Magnetics Society on the topic of Frontiers in Ferrite Materials and High Frequency Devices. He is recognized as the foremost authority on this topic and is often invited to review and provide his perspective on the future of this field for the physics, engineering, materials science and business communities. More than 300 international trade journals, magazines, news outlets, and websites have reported his research breakthroughs.

It had been widely recognized that as electronic systems’ operating frequency shifts to microwave and millimeter wave bands, the integration of ferrite passive devices with semiconductor solid state active devices holds significant advantages in improved miniaturization, bandwidth, speed, power and production costs, among others. Traditionally, ferrites have been employed in discrete bulk form, despite attempts to integrate ferrite as films within Microwave Integrated Circuits. Technical barriers remain centric to the incompatibility between ferrite and semiconductor materials and their processing protocols. In this presentation, we present past and present efforts at ferrite integration with semiconductor platforms with the aim to identify the most promising paths to realizing the complete integration of on-chip ferrite and semiconductor devices, assemblies and systems.